IGBT

RSC300HF170T2NH  SiC MOSFET Module features： Ultra Low Loss、 High-Frequency Operation、Zero Reverse Recovery Current from Diode、Zero Turn-off Tail Current from MOSFET、Normally-off, Fail-safe Device Operation、Easy of Paralleling、Copper Baseplate and Aluminum Nitride Insulator.

RT100P20T6H-M IGBT Module features:
1. Field Stop Trench Gate IGBT
2. Short Circuit Rated> 10us
3. Low Saturation Voltage
4. Low Switching Loss
5. 100% RBSOA Tested (2xlc)
6. Low Stray Inductance
7. Lead Free, Compliant with RoHS Requirement

RTK200HF120BA2 1200V/200A 2 in one-package features:
1.1200V200A,VCE(sat)(typ.)=2.1V
2.Lower losses and higher energy
3.Excellent short circuit ruggedness
4.62mm half bridge module

Rongtech 650V Trench Field Stop IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for motion
control, solar application and welding machine.

RGW40N120T1B 1200V /40A Trench Field Stop IGBT features：
1.High breakdown voltage to 1200V for improved reliability
2.Trench-Stop Technology offering:
 a.very tight parameter distribution
 b. high ruggedness, temperature stable behavior
 c.Short circuit withstand time - 10us
 d.High ruggedness, temperature stable
 e.Low VCE(SAT) > Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)
3.Enhanced avalanche capability

RGW40N120F1A 1200V /40A Trench Field Stop IGBT features：
• High breakdown voltage to 1200V for improved reliability
• Trench-Stop Technology offering :
1）High speed switching
2）High ruggedness, temperature stable
3） Low VCEsat
4）Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Enhanced avalanche capability

Rongtech Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as inductive heating, microwave oven, etc.

GTS40FB120T5HB IGBT Module Features:
· Short Circuit Rated>10us
· Low Saturation Voltage: VCE (sat) = 2.15V @ Ic = 40A, Tc=25°C
· Low Switching Loss
· 100% RBSOA Tested (2x|c)
· Low Stray Inductance
· Lead Free, Compliant with RoHS Requirement

1200V/25A PIM in one-package features
• Trench + Filed Stop IGBT technology
• 10us short circuit capability
• VcE(sat) with positive temperature coefficient
• Low inductance case
• Fast & soft reverse recovery anti-parallel FWD
• Isolated copper baseplate using DBC technology