RT1D12010T2 - 1200V 10A SiC Schottky Diode
RT1D12010T2 - 1200V 10A SiC Schottky Diode
- Rongtech
- china
- 7days
- 30000
RT1D12010T2 - 1200V 10A SiC Schottky Diode Features:Max Junction Temperature 175°C, High Surge Current Capacity, Zero Reverse Recovery Current, Zero Forward Recovery Voltage, High-Frequency Operation, Temperature independent switching behavior, Positive Temperature Coefficient on Vf.
RT1D12010T2 - 1200V 10A SiC Schottky Diode Applications:
Solar Power Boost
Inverter Free Wheeling Diodes
Vienna 3-Phase PFC
AC/DC Converters
Switch Mode Power Supplies
RT1D12010T2 - 1200V 10A SiC Schottky Diode data
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